j. ls e11eu 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n np n powe r transisto r bdy7 3 descriptio n ? excellen t saf e operatin g are a ? d c curren t gain-h f e=50-150@l c = 4 a ? collector-emitte r saturatio n voltage - : v ce (sa.) = 1 1 v(max) @ l c = 4 a application s ? designe d fo r general-purpos e switchin g an d amplifie r application s absolut e maximu m ratings(t a =25c ) symbo l vcb o voe r vce o veb o l c i b p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s bas e curren t collecto r powe r dissipation@t g =25 c junctio n temperatur e storag e temperatur e valu e 10 0 7 0 6 0 7 1 5 7 11 7 20 0 -65-20 0 uni t v vv v a a w ' c r therma l characteristic s symbo l rt h j- c paramete r ma x therma l resistance , junctio n t o cas e 1 . 5 uni t "c/ w 2 pi n 1.bas e 2 . emitte r 3.cqllector(case ) to- 3 packag e i a 1 1 i -*iu-d ; *~~r- ^ ^\'-^r f ( t ^ 1 \^ t c tp l r / \ c \n di m m m ma x a 39x ? b 253 0 c r.a o d 09 0 e 1.4 0 2 6 &t 8.3 0 1.1 0 1.6 0 < i 109 2 h 54 6 j| ^ 11.4 0 r l 16.7 5 n 194 0 0 40 u 300 0 v 43 0 135 0 iro s 195 2 42 0 302 0 4 s o l k 13 0 t t ; b < i n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press. however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transistor s bdy7 3 electrica l characteristic s t c =25' c unles s otherwis e specifie d symbo l vceo(sus ) vcer(sus ) vcex(sus ) vce(sat ) vse(on ) ice o ice x ieb o hp e is/ b f r paramete r collector-emitte r sustainin g voltag e collector-emitte r sustainin g voltag e collector-emitte r sustainin g voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutoff curren t collecto r cutof f curren t emitte r cutoff curren t d c curren t gai n secon d breakdow n collecto r curren t wit h bas e forwar d biase d curren t gain-bandwidt h produc t condition s lc = 200ma ; 1 b = 0 lc = 200ma ; r be =100f i lc=100ma;v be =-1.5 v lc = 4a ; i b = 0.4 a lc = 4a ; v ce = 4 v v ce = 30v ; i b = 0 vce=100v;v b e (t ,ff)=1.5 v vce = 100v ; v b 6 ( cff) = 1.5v,t c =150 c v eb = 7.0v ; l c = 0 lc = 4a ; v ce = 4 v v c e = 60v , t = 1.0s , nonrepetitiv e lc=1a;v ce =4 v mi n 6 0 7 0 9 0 5 0 1.9 5 0. 8 ma x 1. 1 1. 8 0. 7 1. 0 5. 0 5. 0 15 0 uni t v v v v v m a m a m a a mh z downloaded from: http:///
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